TECHNOLOGY
PESANA LAB's Next-Generation Precision Surface Analysis Technology
UPS Ultraviolet Photoemission Spectroscopy
Precisely analyzes occupied states, including the valence band structure and work function, with high resolution.
Analysis Area
Valence Band Maximum (VBM), Work Function, Highest Occupied Molecular Orbital (HOMO)
Excitation Source
He I (21.22 eV) high-vacuum ultraviolet discharge lamp
Applications
Energy level alignment analysis for OLEDs, Organic Photovoltaics (OPVs), and Perovskites
LEPES Low-Energy Photoemission Spectroscopy
A photoemission spectroscopy technique utilizing a low-energy light source to minimize sample damage and light-induced effects while analyzing the valence band structure and occupied states.
Analysis Area
Valence Band Maximum (VBM), Work Function, Highest Occupied Molecular Orbital (HOMO)
Excitation Source
H-lamp Lyman-alpha (10.2 eV) high-vacuum VUV discharge lamp
Applications
Energy level alignment analysis for OLEDs, Organic Photovoltaics (OPVs), and Perovskites
XPS X-ray Photoelectron Spectroscopy
Precisely analyzes the chemical composition and chemical states of material surfaces with high resolution.
Analysis Area
Quantitative elemental composition and chemical shift analysis
Excitation Source
Monochromatized Al Kα (1486.6 eV) or Mg Kα (1253.6 eV) X-ray
Applications
Surface oxide layer analysis of multi-dimensional materials and depth profiling of thin films
IPES Inverse Photoemission Spectroscopy
A core foundational technology for analyzing unoccupied states. It precisely measures the photons emitted as incident electrons transition into empty energy levels on the sample surface. Through our proprietary optical and detector design, we provide an overwhelmingly high-sensitivity IPES technology compared to conventional commercial equipment.
Analysis Area
Conduction Band Minimum (CBM), Electron Affinity, Lowest Unoccupied Molecular Orbital (LUMO)
Ultra-High Sensitivity Optics
Accurately collects minute photon signals without loss by maximizing collection efficiency using a precisely designed off-axis parabolic (OAP) mirror.
High-Stability Electron Gun
Ensures high-resolution measurement and long-term operational stability with an electron source system that minimizes energy spread.
LEIPS Low-Energy Inverse Photoemission Spectroscopy
An innovative low-energy inverse photoemission spectroscopy that evolves one step further from conventional IPES technology. By measuring photons generated from the incidence of very low kinetic energy electrons, it identifies the unoccupied states of organic materials and sensitive devices without damage.
Analysis Area
Conduction Band Minimum (CBM), Electron Affinity, Lowest Unoccupied Molecular Orbital (LUMO)
Core Advantage
Fundamentally prevents organic sample damage caused by electron beams.
Measurement Method
Utilizes a high-sensitivity photon detector in the monochromatized Near-UV region.
REELS Reflection Electron Energy Loss Spectroscopy
An analytical technique that measures electrons that are inelastically scattered and lose energy after incident electrons with a specific energy hit the surface. This directly determines the unique electronic transitions and optical band gap of the material surface.
Analysis Area
Optical band gap, Electronic transition states, Plasmon loss
Overwhelming Surface Sensitivity
Unlike conventional UV-Vis absorption spectroscopy utilizing light, it uses electrons to highly sensitively measure the optical properties of only the outermost surface layer (a few nm).
Synergistic Analysis
When analyzed alongside transport gap data obtained from UPS and IPES measurements, it can be highly useful for studies such as the exciton binding energy of organic devices.